曾辉，男，中共党员，厦门大学博士，武汉大学硕士，湖南大学、南方科技大学等访问学者，并荣获2024年“优秀国内访问学者”等称号，硕士生导师，5001拉斯维加斯副教授。《5001拉斯维加斯学报》青年编委；Computational Condensed Matter、Materials Science and Engineering B、Physica Status Solidi-Rapid Research Letters、Current Nanoscience等SCI期刊审稿人；湖南省量子科技学会会员，全国本科毕业论文（设计）抽检评审专家库专家，新能源材料专业方向主要带头人。主要从事机器神经网络学习、新能源半导体材料的热输运、电输运以及二维材料光电流效应研究。
近年来基于第一性原理计算结合机器神经网络深度学习，针对高导电p型二维氧化镓的设计与机理研究，在国际权威期刊Frontiers of Physics、ACS Applied Nano Materials、Journal of Physics D: Applied Physics、European Physical Journal Plus、Applied Physics Express等发表SCI论文40余篇；参与教材编撰1部。主持湖南省教育厅重点科研项目（2025）、湖南省高校重点实验室基金（2025）、湖南省自然科学基金区域联合项目（2024），永州市指导性科技计划项目（2024）、湖南省教育厅优秀青年科研项目（2023）等项目。多次指导学生在大学生物理竞赛获奖。
一、主持的部分科研项目
[1]湖南省教育厅重点科研项目（批准号：25A0590），项目名称：“具有各向同性的高导电p型二维氧化镓的设计与机理研究”，项目起止年月：2025/12-2028/12.
[2]湖南省高校重点实验室基金（批准号：2507），项目名称：“基于二维氧化稼的p型设计和电输运研究”，项目起止年月：2025/12-2026/12.
[3]湖南省自然科学基金区域联合项目（批准号：2024JJ7200），项目名称：“高导电p型二维氧化镓半导体的设计与机制研究”，项目起止年月：2024/01-2026/12.
[4]永州市指导性科技计划项目（批准号：2024YZ017），项目名称：“P型二维氧化镓导电性能的设计”，项目起止年月：2024/01-2026/12.
[5]湖南省教育厅优秀青年科研项目（批准号：23B0752），项目名称：“基于N掺杂的p型氧化镓设计及高导电机制的研究”，项目起止年月：2024/01-2026/12.（已结题）
二、近五年已发表第一或通讯作者SCI论文
[1]H. Zeng*(曾辉), C. Ma, Y. Xue, M. Wu*, Tuning the structural, electronic, and transport properties of ferroelectric-zinc blende phase Ga2O3 monolayer by Si dopant and biaxial strain Mater. Sci. Eng. B Accepted (2026).(影响因子：4.6，JCR 2区).
[2]H. Zeng*(曾辉), W. Tang, C. Ma, L. Hu, Y. Xue, M. Wu*, Anisotropic elasticity and enhanced thermal conductivity in ordered (AlxGa1-x)2O3 alloys Appl. Phys. A Accepted (2026).(影响因子：2.8，JCR 2区).
[3]H. Zeng*(曾辉), C. Ma, M. Wu*, Compressively Strained p-Type Mg-Doped Two-Dimensional Ga2O3 with a Direct Band Gap and Anisotropic Hole Mobility ACS Appl. Nano. Mater. 8 10004 (2025).(影响因子：5.5，JCR 2区).
[4]H. Zeng*(曾辉), C. Ma, Y. Xue, M. Wu*, P-type Ca-doped two-dimensional Ga2O3 with strain-modulated high hole mobility and anisotropy J. Phys. D: Appl. Phys. 58 385101 (2025).(影响因子：3.2，JCR 2区).
[5]H. Zeng*(曾辉), X. Fu*, G. Liang, J. Lin, W. Liao, L. L i, Point defect improved linear and elliptical photogalvanic effects in a BSi3 photo-detector Eur. Phys. J. Plus 140 823 (2025).(影响因子：2.9，JCR 2区).
[6]H. Zeng*(曾辉), C. Ma, L. Hui, Y. Xue, M. Wu*, Exploring the structural, electronic, and transport properties in thickness-dependent two-dimensional Ga2O3 induced by native defects Nanotechnology 36 405703 (2025).(影响因子：2.8，JCR 2区).
[7]H. Zeng*(曾辉), C. Ma, Y. Xue, M. Wu*, 2025 Roles of oxygen vacancy in two-dimensional Ga2O3 tuned by biaxial strain Appl. Phys. A 131 827 (2025).(影响因子：2.8，JCR 2区).
[8]H. Zeng*(曾辉), M. Wu*, C. Ma, X. Fu, H. Gao, Tunable electronic, transport, and optical properties of fluorine- and hydrogen-passivated two-dimensional Ga2O3 by uniaxial strain, J. Phys. D: Appl. Phys., 57 315105 (2024).(影响因子：3.2，JCR 2区).
[9]H. Zeng*(曾辉), C. Ma, M. Wu*, High Electron Mobility in Si-Doped Two-Dimensional β-Ga2O3 Tuned Using Biaxial Strain, Materials, 17 4008 (2024).(影响因子：3.2，JCR 1区).
[10]H. Zeng*(曾辉), C. Ma, M. Wu*, Ultra-high electron mobility in Sn-doped two-dimensional Ga2O3 modified by biaxial strain and electric field, Appl. Phys. Express, 17 081004 (2024).(影响因子：2.2，JCR 3区).
[11]H. Zeng*(曾辉), C. Ma, M. Wu*, Effective P-type N-doped α-Ga2O3 from First-Principles Calculations, J. Supercond. Novel Magn., 37 1017-1027 (2024).(影响因子：1.7，JCR 3区).
[12]H. Zeng*(曾辉), C. Ma, M. Wu*, Exploring the effective P-type dopants in two-dimensional Ga2O3 by first-principles calculations, AIP Adv., 14 055221 (2024).(影响因子：1.4，JCR 4区).
[13]H. Zeng*(曾辉), C. Ma, M. Wu*, Strain mediated ultra-high electron mobility in Ge-doped two-dimensional Ga2O3, AIP Adv., 14 085227 (2024).(影响因子：1.4，JCR 4区).
[14]H. Zeng*(曾辉), C. Ma, X. Li, X. Fu, H. Gao, M. Wu*, Roles of Impurity Levels in 3d Transition Metal-Doped Two-Dimensional Ga2O3, Materials, 17 4582 (2024).(影响因子：3.2，JCR 1区).
[15]X. Fu, G. Liang, J. Lin, W. Liao, H. Zeng*(曾辉), L. Li, X. Li, Linear and elliptical photogalvanic effects in two-dimensional Be2Al photodetector, J. Mater. Sci.: Mater. Electron., 35 1131 (2024).(影响因子：2.8，JCR 2区).
[16]H. Zeng*(曾辉), M. Wu*, M. Chen, Q. Lin, Effects of Cu, Zn Doping on the Structural, Electronic, and Optical Properties of α-Ga2O3: First-Principles Calculations, Materials, 16 5317 (2023).(影响因子：3.2，JCR 1区).
[17]H. Zeng*(曾辉), M. Wu*, H. Gao, Y. Wang, H. Xu, M. Cheng, Q. Lin, Role of Native Defects in Fe-Doped β-Ga2O3, Materials, 16 6758 (2023).(影响因子：3.2，JCR 1区).
[18]H. Zeng(曾辉), M. Wu, Hui-Qiong Wang*, Jin-Cheng Zheng*, Junyong Kang, Tuning the magnetic and electronic properties of strontium titanate by carbon doping, Front. Phys., 16 43501 (2021).(影响因子：5.3，JCR 1区).
[19]H. Zeng(曾辉), M.W. H.-Q. Wang*, J.-C. Zheng*, and J. Kang, Tuning the Magnetism in Boron-Doped Strontium Titanate, Materials, 13 5686 (2020).(影响因子：3.2，JCR 1区).
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